SOI power devices

F. Udrea, D. Garner, K. Sheng, A. Popescu, H. Lim, V. I. Milne
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引用次数: 43

Abstract

This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low-voltage CMOS are also analysed.
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SOI功率器件
本文介绍了绝缘体上硅(SOI)技术和高压SOI器件的工作原理,回顾了现有SOI开关器件与标准硅器件的性能比较,讨论了在功率应用中使用SOI技术的原因,并涵盖了迄今为止提出的最先进的新型功率SOI器件。分析了SOI技术对功率集成电路(PICs)的影响以及高低压CMOS集成的相关问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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