Overheating-Avoidance Remapping Scheme for Reliability Enhancement of 3D PCM Storage Systems

Yu-Chen Lin, Tse-Yuan Wang, Che-Wei Tsao, Yuan-Hao Chang, Jian-Jia Chen, Xue Liu, Tei-Wei Kuo
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Abstract

With the trend of 3D architecture and higher access rate, Phase Change Memory (PCM) storage devices face the overheating issue. This work is motivated by the observation that PCM devices might change states of memory cells with high temperature, and it will hurt the reliability of 3D PCM storage systems. Hence, we propose an Overheating-Avoidance Remapping Scheme (OARS) that controls the temperature of PCM layers and achieves wear-leveling of PCM cells inside PCM devices. Besides, we also take remapping overhead into consideration. The experiments were conducted based on the representative realistic workloads, and the results demonstrate the efficacy of the proposed scheme.
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提高三维PCM存储系统可靠性的防过热重映射方案
随着三维结构和更高存取率的趋势,相变存储器(PCM)存储设备面临着过热问题。这项工作的动机是观察到PCM器件可能在高温下改变存储单元的状态,这将损害3D PCM存储系统的可靠性。因此,我们提出了一种避免过热重映射方案(OARS),该方案控制PCM层的温度并实现PCM器件内PCM单元的磨损均衡。此外,我们还考虑了重新映射的开销。在具有代表性的实际工作负载上进行了实验,结果证明了该方案的有效性。
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