Transistor Large-Signal Scattering Parameters and Application in Microwave Circuit Design

Abstract

A new definition of transistor large-signal scattering parameters for prescribed source and load impedances is introduced. These parameters provide the exact design of nonlinear microwave circuits. In the paper, a new definition of transistor large-signal scattering parameters for prescribed source and load impedances is introduced. These parameters relate increments of the first harmonics of incident and reflected waves at transistor ports with respect to steady-state operation. A way to calculate scattering parameters using PSPICE simulator is proposed. It is demonstrated that new parameters provide the exact design of microwave power amplifiers and oscillators.