Hierarchical and Gradient Si Nano Wires-holes Arrays by LIL and MACE

Abstract

In this work, we represent an elegant way for the fabrication of hybrid Si nanowires and nanoholes (NWs-NHS) arrays. In this article, we characterized the array structures and obtained their periods, diameters and etching depths by collaborating the laser interference lithography (LIL) and metal-assisted chemical etching (MACE). First of all, silver (Ag) films were placed on Silicon (Si) substrates, and a 1064 nm high power laser source was used. Afterward, MACE was done for the fabrication of hybrid Si (NWs-Hs) arrays. The images with the surface characteristics were obtained by scanning electron microscope (SEM). This work offers a simple, less time-consuming, and cost-effective process of micro-nano pattern fabrication.