{"title":"Numerical Langevine-like method for modelling the noise currents in semiconductors","authors":"K. Jóźwikowski","doi":"10.1109/NUSOD.2016.7547058","DOIUrl":null,"url":null,"abstract":"This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7547058","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents a numerical method for determining the spectral density of noise current in semiconductor structures. Based on P. Handel's theory we have considered a wide range of sources of 1/ f noise caused both by generation-recombination (g-r) and scattering processes. In addition to the shot g-r noise caused by different mechanism, the diffusion noise and temperature fluctuations are also included. Moreover, we have found in HgCdTe nBn long wavelength detectors the place where the noise current is mainly generated.
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