Subsurface junction field effect transistor (SJFET)

Abstract

A novel, bipolar compatible junction field effect transistor structure is described in this paper. The device is fabricated using a single high energy boron implant which results in a p-type channel embedded in an n-epitaxial background material. The channel is buffered from the Si/SiO2interface by a thin n-type layer which improves device reproducibility. The resulting devices exhibit controllable pinchoff voltages in the subvolt range.