Recent progress of graphene-based nanoelectronic and NEM device technologies for advanced applications

Abstract

Graphene possesses remarkable electronic and mechanical properties and provides a promising platform to explore future nanoelectronic and nano electro-mechanical (NEM) devices for challenging applications. In this talk, we first present state-of-the-art fabrication technologies for sub-10-nm graphene nanostructures using atomic-size focused helium ion beam (Fig. 1) [1][2] and the HSQ-based electron beam lithography [3]. We then introduce graphene tunnel FETs (GTFETs) [4] and graphene single carrier transistors (GSCTs) [5] briefly which are expected to show advanced characteristics beyond Si-based MOSFETs. We then present our recent attempts of developing graphene NEM (GNEM) switches which achieves extremely abrupt switching with very low switching voltages [6][7] (Fig. 2: upper) and high-performance GNEM environmental sensors (Fig. 2: lower) with single-molecular-level detection limit [8][9]. This work was supported by Grant-in-Aid for Scientific Research No. 25220904 from Japan Society for the Promotion of Science and the Center of Innovation Program from Japan Science and Technology Agency.