A phase reference standard free setup for two-path memory model identification of wideband power amplifier

K. El-Akhdar, D. Gapillout, C. Mazière, S. Mons, E. Ngoya
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引用次数: 4

Abstract

This paper presents a measurement scenario for the indirect identification of long term memory kernel of the two-path memory behavioral model. The measurement principle is based on the use of a regular VNA setup and is applied here for the characterization and modeling of a LDMOS power amplifier. It has been experimentally demonstrated that this measurement principle allows an accurate model identification by performing a simple set of measurements. Extracted model proves the ability to provide a good prediction for complex communication signals.
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一种用于宽带功率放大器双路存储器模型识别的无相位参考标准装置
本文提出了一种双路径记忆行为模型长期记忆核的间接识别测量方案。测量原理基于使用常规VNA设置,并在此应用于LDMOS功率放大器的表征和建模。实验证明,该测量原理可以通过执行一组简单的测量来精确地识别模型。所提取的模型对复杂的通信信号具有较好的预测能力。
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