B. Majumdar, P. Mukherjee, F. A. Talukdar, S. Biswas
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引用次数: 1
Abstract
A new gate drive circuit for efficient switching of IGBTs has been presented in this paper. This circuit contains a short circuit protection scheme by limiting the IGBT fault current to a lower value through reduction of the IGBT gate voltage and thereby can distinguish a transient from an actual fault. Apart from the short circuit protection, the circuit also protects the IGBT in case of over-temperature. This circuit does not have any speed-up capacitor, differentiating element or latching element, thus giving good immunity towards unwanted noise. The oscillograms presented in this paper confirms satisfactory operation of this circuit.
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