By Amin Ezzeddine, A. Hung, E. Viveiros, Ho-Chung Huang
{"title":"Ultra wide-band, high-power, high-efficiency GaN amplifier","authors":"By Amin Ezzeddine, A. Hung, E. Viveiros, Ho-Chung Huang","doi":"10.1109/IEEE-IWS.2013.6616737","DOIUrl":null,"url":null,"abstract":"We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2013.6616737","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
We report a high-performance GaN amplifier operating from 100MHz to 3,000MHz. The best results included 100W output power, 22dB gain with 40% power-added-efficiency from 100MHz to 3,000MHz. This performance is achieved by tailoring both the device impedance and by using unique wide-band circuit matching topology. Detailed design technique of both device and matching circuit will be presented.
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