Synthesis and photoluminescence of SiOx nanowires and aligned nanocakes for solar cell applications

M. Al-Ruqeishi, Khalifa Al-Azri, R. Nor, Y. M. Amin
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Abstract

The growth of SiOx nanowires and nano-cakes on Au-coated n-type-Silicon (100) substrate via carbothermal evaporation were studied. The standing nanowires were preferred in solar cells to gain more energy. The effects of the Au layer thickness and rapid heating rate on the morphology of obtained SiOx nanowires were investigated. A broad emission band from 290 to 600 nm is observed in the photoluminescence (PL) spectrum of these nanowires. There are four PL peaks: one blue emission peaks 485 nm (2.56 eV) two green bands centred at 502 nm (2.47 eV) and 524 nm (2.37 eV) for nanocakes and one ultraviolet emission peak at 350 nm (3.54 eV) and a hemisphere curve over the bluish green area taken for SiOx nanowires. These emissions may be related to the various oxygen defects and twofold coordinated silicon lone pair centres.
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用于太阳能电池的SiOx纳米线和排列纳米焦的合成和光致发光
研究了碳热蒸发法在镀金n型硅(100)衬底上生长SiOx纳米线和纳米饼的过程。直立的纳米线在太阳能电池中更受欢迎,以获得更多的能量。研究了Au层厚度和快速加热速率对SiOx纳米线形貌的影响。在这些纳米线的光致发光(PL)光谱中观察到290 ~ 600 nm的宽发射波段。SiOx纳米线有四个PL峰:485 nm (2.56 eV)的一个蓝色发射峰,两个以502 nm (2.47 eV)和524 nm (2.37 eV)为中心的绿色带,一个350 nm (3.54 eV)的紫外发射峰和蓝绿色区域上方的半球曲线。这些发射可能与各种氧缺陷和双配位硅孤对中心有关。
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