N. Nemoto, H. Shindou, S. Kuboyama, H. Itoh, S. Matsuda, S. Okada, I. Nashiyama
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引用次数: 3
Abstract
Single-Event Upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU rate and structures/fabrication processes. In this experiment, single-ion Multiple-Bit Upsets (MBUs) in 4 Mbit SRAM, 16 Mbit DRAM and 64 Mbit DRAM were observed. These MBUs were also discussed.
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