{"title":"Integrated passive devices on the selectively anodized aluminum oxide","authors":"J. Yook, Je-In Yu, Young‐Joon Kim, Young-Se Kwon","doi":"10.23919/eumc.2009.5296509","DOIUrl":null,"url":null,"abstract":"By using selectively anodized aluminium, various IPDs (Integrated Passive Devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (Insertion Loss) respectively with small size.","PeriodicalId":232128,"journal":{"name":"2009 European Microwave Conference (EuMC)","volume":"22 5","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 European Microwave Conference (EuMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2009.5296509","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
By using selectively anodized aluminium, various IPDs (Integrated Passive Devices) are designed and fabricated. Thin-film processes are used to realize high Q inductors and high density capacitors. Q factors of the fabricated spiral inductors have more than 25 at 2 GHz and IPDs fabricated using this inductors have good RF performances. The fabricated 0.9 GHz LPF and 2.45 GHz BPF have only 0.38 dB and 1.89 dB of IL (Insertion Loss) respectively with small size.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
