First-Principles Study of Electronic and Dielectric Properties in Lanthanum Manganate

H. Omkar, H. Sreepad
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Abstract

First-principles calculations based on Density Functional Theory have been done on Lanthanum manganate. Its orthorhombic unit cell has been simulated. Electronic density of states has been computed and it shows that the material shows the nature of semiconducting material with a band gap of 1.38eV. Dielectric constant and Polarizability of the material have been computed. The value of dielectric constant comes out to be 47.3, 13.3 and 15.2 along X, Y and Z axes respectively with an average value of 25.3. The polarizability values are found to be 55.1(Å)3, 47.2(Å)3 and 48.5 (Å)3 along X, Y and Z axes respectively with an average value of 50.3(Å)3. Phonon modes at gamma point in the material range from 0 cm-1 to 885 cm-1.
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锰酸镧电子和介电性质的第一性原理研究
利用密度泛函理论对锰酸镧进行了第一性原理计算。对其正交晶胞进行了模拟。计算了该材料的电子态密度,结果表明该材料具有半导体性质,带隙为1.38eV。计算了材料的介电常数和极化率。得到介电常数沿X、Y、Z轴分别为47.3、13.3、15.2,平均值为25.3。极化率沿X、Y、Z轴分别为55.1(Å)3、47.2(Å)3和48.5 (Å)3,平均值为50.3(Å)3。材料伽玛点声子模范围为0 ~ 885 cm-1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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