Ch. D. Jalilova, A. Aliyev, N. V. Faradjev, Sh. M. Alekperova
{"title":"Photodiodes based on Pb1-xSnxSe epitaxial films","authors":"Ch. D. Jalilova, A. Aliyev, N. V. Faradjev, Sh. M. Alekperova","doi":"10.1117/12.742325","DOIUrl":null,"url":null,"abstract":"The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb1-xSnxSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (NGaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (Eg), temperature coefficient of Eg are calculated. The conditions of preparing metal - Pb1-xSnxSe photodiode structures are determined and capacity temperature dependence of metal - Pb1-xSnxSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.","PeriodicalId":160828,"journal":{"name":"International Conference on Photoelectronics and Night Vision Devices","volume":"17 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Photoelectronics and Night Vision Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.742325","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The features of the electrical, optical and photoelectric properties of gallium (Ga) doped Pb1-xSnxSe (0,03 less than or equal to x less than or equal to 0,07) epitaxial films (NGaO,5l at%) obtained by the molecular beam condensation method (MBC) are investigated. It is established that the interband absorption edge are stipulated from nondirect transition, the value of band gap (Eg), temperature coefficient of Eg are calculated. The conditions of preparing metal - Pb1-xSnxSe photodiode structures are determined and capacity temperature dependence of metal - Pb1-xSnxSe structure are analysed. The current-voltage and capacity-voltage characteristics of the obtained photodiodes.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
