{"title":"GaInNAs QW with GaNAs intermediate layer for long wavelength laser","authors":"F. Maskuriy, M. Alias, S. Mitani, A. A. Manaf","doi":"10.1109/ISIEA.2011.6108787","DOIUrl":null,"url":null,"abstract":"In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.","PeriodicalId":110449,"journal":{"name":"2011 IEEE Symposium on Industrial Electronics and Applications","volume":"15 17 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2011-12-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2011 IEEE Symposium on Industrial Electronics and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISIEA.2011.6108787","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.