GaInNAs QW with GaNAs intermediate layer for long wavelength laser

F. Maskuriy, M. Alias, S. Mitani, A. A. Manaf
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Abstract

In this paper, we propose a structure, the GaInNAs QW with GaNAs intermediate layer (IML) which shows better performance in the optical properties as compared to the commonly used GaInNAs-GaAS rectangular quantum wells. The simulation software PICS3D is used in this work. Photoluminescence peak wavelength of 1327-nm GaInNAs-GaNAs IML laser has been achieved with a low threshold current 195mA and relatively high characteristic temperature, T0 of 270K. The IML structure is a promising invention for long wavelength GaAs-based laser in for the application in the fiber optic communication.
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长波长激光用带中间层的GaInNAs QW
在本文中,我们提出了一种具有gaas中间层(IML)的GaInNAs量子阱结构,与常用的GaInNAs- gaas矩形量子阱相比,它在光学性能方面表现出更好的性能。本工作采用PICS3D仿真软件。在较低的阈值电流195mA和较高的特性温度T0为270K的条件下,实现了1327 nm的gainas - ganas IML激光器的光致发光峰值波长。IML结构是一种很有前途的长波gaas基激光器,可用于光纤通信。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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