Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET

S. Hatta, H. Hussin, F. Y. Soon, Y. A. Wahab, D. Hadi, N. Soin, A. Alam, A. Nordin
{"title":"Negative bias temperature instability characterization and lifetime evaluations of submicron pMOSFET","authors":"S. Hatta, H. Hussin, F. Y. Soon, Y. A. Wahab, D. Hadi, N. Soin, A. Alam, A. Nordin","doi":"10.1109/ISCAIE.2017.8074978","DOIUrl":null,"url":null,"abstract":"A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time needed for the device to achieve 10% degradation of Vth. The effect on NBTI degradation is shown to be reliant on stress conditions (stress voltage, temperature) and device architecture (gate dimensions, gate oxide thickness). The NBTI lifetime was predicted by extrapolating lifetime to the nominal operating voltage from Time-to-Fail versus stress bias and oxide electric field plots. Both plots show that the lifetime of degradation parameter of Vth is lower compared to the lifetime of degradation parameter of Idsat.","PeriodicalId":298950,"journal":{"name":"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE Symposium on Computer Applications & Industrial Electronics (ISCAIE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAIE.2017.8074978","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

Abstract

A major effect of different measurement delay in seconds is revealed through quasi DC Stress Measure Stress experiments. We found that different delay of measurements in seconds contributed to different stress time needed to achieve target 10% degradation of Vth. The longer delay, the more time needed for the device to achieve 10% degradation of Vth. The effect on NBTI degradation is shown to be reliant on stress conditions (stress voltage, temperature) and device architecture (gate dimensions, gate oxide thickness). The NBTI lifetime was predicted by extrapolating lifetime to the nominal operating voltage from Time-to-Fail versus stress bias and oxide electric field plots. Both plots show that the lifetime of degradation parameter of Vth is lower compared to the lifetime of degradation parameter of Idsat.
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亚微米pMOSFET负偏置温度不稳定性表征及寿命评估
通过准直流电应力测量实验,揭示了不同测量延迟(秒)对直流电应力的主要影响。我们发现,不同的测量延迟(以秒为单位)会导致不同的应力时间,以达到10%的Vth退化目标。延迟越长,设备达到10%的Vth衰减所需的时间越长。对NBTI降解的影响取决于应力条件(应力电压、温度)和器件结构(栅尺寸、栅氧化物厚度)。通过从失效时间与应力偏置和氧化电场图中将寿命外推到标称工作电压来预测NBTI寿命。两幅图都表明,与Idsat的退化参数寿命相比,Vth的退化参数寿命更短。
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