Design, Analysis and Comparison of PFD Architectures for Fast Locking Frequency Synthesizer

Avinash Sharma, Gopal Sharma, Arun kishor Johar, T. B. Kumar, D. Boolchandani
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引用次数: 1

Abstract

In this work design and analysis of Two Phase Frequency Detector (PFD) architectures have been carried out in SCL 180 nm CMOS technology. Performance of these PFD's are evaluated in terms of delay and power consumption. Supply voltage of 1.8 V is used to optimize the performance. Among the two designed PFD architectures, first PFD is designed using Multithreshold Complementary Oxide Semiconductor (MTCMOS) power gating technique and second is designed by utilizing feed forward reset PFD using external delay cell. First architecture has the advantage of reduced power consumption whereas second architecture is suitable for the design of high frequency and low jitter frequency synthesizers, as it offers very small dead zone. Simulation results display that feed forward PFD is free from dead zone but at the cost of increased complexity in terms of area and power consumption.
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快速锁定频率合成器PFD架构的设计、分析与比较
本文采用SCL 180 nm CMOS技术,对两相频率检测器(PFD)的结构进行了设计和分析。这些PFD的性能是根据延迟和功耗来评估的。电源电压选用1.8 V以优化性能。在设计的两种PFD架构中,第一种PFD采用多阈值互补氧化物半导体(MTCMOS)功率门控技术设计,第二种PFD采用采用外部延迟单元的前馈复位设计。第一种架构具有降低功耗的优点,而第二种架构适合设计高频和低抖动频率合成器,因为它提供了非常小的死区。仿真结果表明,前馈PFD不存在死区,但在面积和功耗方面增加了复杂度。
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