G. Schrom, P. Hazucha, J. Hahn, V. Kursun, D. Gardner, S. Narendra, T. Karnik, V. De
{"title":"Feasibility of monolithic and 3D-stacked DC-DC converters for microprocessors in 90nm technology generation","authors":"G. Schrom, P. Hazucha, J. Hahn, V. Kursun, D. Gardner, S. Narendra, T. Karnik, V. De","doi":"10.1145/1013235.1013302","DOIUrl":null,"url":null,"abstract":"Rapidly increasing input current of microprocessors resulted in rising cost and motherboard real estate occupied by decoupling capacitors and power routing. We show by analysis that an on-die switching DC-DC converter is feasible for future microprocessor power delivery. The DC-DC converter can be fabricated in an existing CMOS process (90nm-180nm) with a back-end thin-film inductor module. We show that 85% efficiency and 10% output voltage droop can be achieved for 4:1, 3:1, and 2:1 conversion ratios, area overhead of 5% and no additional on-die decoupling capacitance. A 4:1 conversion results in 3.4/spl times/ smaller input current and 6.8/spl times/ smaller external decoupling.","PeriodicalId":120002,"journal":{"name":"Proceedings of the 2004 International Symposium on Low Power Electronics and Design (IEEE Cat. No.04TH8758)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"74","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2004 International Symposium on Low Power Electronics and Design (IEEE Cat. No.04TH8758)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/1013235.1013302","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 74
Abstract
Rapidly increasing input current of microprocessors resulted in rising cost and motherboard real estate occupied by decoupling capacitors and power routing. We show by analysis that an on-die switching DC-DC converter is feasible for future microprocessor power delivery. The DC-DC converter can be fabricated in an existing CMOS process (90nm-180nm) with a back-end thin-film inductor module. We show that 85% efficiency and 10% output voltage droop can be achieved for 4:1, 3:1, and 2:1 conversion ratios, area overhead of 5% and no additional on-die decoupling capacitance. A 4:1 conversion results in 3.4/spl times/ smaller input current and 6.8/spl times/ smaller external decoupling.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
