{"title":"Drift of Minority Carriers in the Presence of Trapping","authors":"A. Jonscher","doi":"10.1088/0370-1301/70/2/309","DOIUrl":null,"url":null,"abstract":"It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation: \n \n \n \n(1)","PeriodicalId":351690,"journal":{"name":"Halbleiter und Phosphore","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1957-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Halbleiter und Phosphore","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/0370-1301/70/2/309","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
It is known that in most semiconductors and photoconductors excitation of excess free carrier densities Δn and Δp is accompanied by some “trapping” of either or both carriers in localised levels in the forbidden band. The population of these levels changes by Δn t and we have the general relation:
(1)
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