High Frequency Capacitive behavior of field stop trench gate IGBTs operating in Short Circuit

Abstract

A wide experimental characterization about the input capacitance of Field Stop Trench Gate IGBTs is presented. It was achieved thanks to a novel experimental set-up which allows us to measure the input capacitance in the active region where the device operate during the Short Circuit (SC). The experimental results have been interpreted with the help of FEM simulations which confirm that negative capacitance is correlated with the accumulation of holes at the interface between N- IGBT base and gate oxide.