D. Wilt, R. Thomas, S. Bailey, D. Brinker, F.L. DeAngelo, N. Fatemi, G. Landis
{"title":"Peeled film GaAs solar cell development","authors":"D. Wilt, R. Thomas, S. Bailey, D. Brinker, F.L. DeAngelo, N. Fatemi, G. Landis","doi":"10.1109/PVSC.1990.111601","DOIUrl":null,"url":null,"abstract":"Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10/sup 6/) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid (HF). The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide (Al/sub x/Ga/sub 1-x/As) window and antireflective (AR) coating, has a V/sub oc/ of 874 mV and a fill factor of 68% under AM0 illumination.<<ETX>>","PeriodicalId":211778,"journal":{"name":"IEEE Conference on Photovoltaic Specialists","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1990-05-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Conference on Photovoltaic Specialists","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1990.111601","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
Thin-film, single-crystal gallium arsenide (GaAs) solar cells could exhibit a specific power approaching 700 W/kg including coverglass. A simple process has been described whereby epitaxial GaAs layers are peeled from a reusable substrate. This process takes advantage of the extreme selectivity (>10/sup 6/) of the etching rate of aluminum arsenide (AlAs) over GaAs in dilute hydrofluoric acid (HF). The feasibility of using the peeled film technique to fabricate high-efficiency, low-mass GaAs solar cells is presently demonstrated. A peeled film GaAs solar cell was successfully produced. The device, although fractured and missing the aluminum gallium arsenide (Al/sub x/Ga/sub 1-x/As) window and antireflective (AR) coating, has a V/sub oc/ of 874 mV and a fill factor of 68% under AM0 illumination.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
