A. Pauchard, M. Bitter, D. Sengupta, Z. Pan, S. Hummel, Y. Lo, Y. Kang, P. Mages, K. L. Yu
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引用次数: 7
Abstract
We have demonstrated a high-performance InGaAs-on-silicon APD that exhibits a very low dark current density of 0.7 mA/cm/sup 2/, high avalanche gain (M/spl Gt/100), an RC-limited bandwidth of 1.45 GHz, and a gain-bandwidth product of 290 GHz. We estimate that our device can achieve a sensitivity improvement of 5 dB compared to state-of-the-art InP-based APD receivers. We are currently measuring the APD excess noise factor. We will report this measurement at the conference.
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