1.3-μm GaAsSb/GaAs VCSELs

SPIE ITCom Pub Date : 2003-12-08 DOI:10.1117/12.512732
P. Dowd, S. Johnson, S. Chaparro, S. Feld, M. Horning, M. Adamcyk, Yong-Hang Zhang
{"title":"1.3-μm GaAsSb/GaAs VCSELs","authors":"P. Dowd, S. Johnson, S. Chaparro, S. Feld, M. Horning, M. Adamcyk, Yong-Hang Zhang","doi":"10.1117/12.512732","DOIUrl":null,"url":null,"abstract":"Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.","PeriodicalId":282161,"journal":{"name":"SPIE ITCom","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"SPIE ITCom","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.512732","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

Room-temperature continuous wave operation of Antimonide-based long wavelength VCSELs has been demonstrated, with 1.2mW power output at 1266nm, the highest figure reported so far using this material system. Single mode powers of 0.3mW at 10°C and 0.1mW at 70°C and side-mode suppression ratios up to 42dB have also been achieved. Preliminary reliability test results have shown so far that the devices can work normally without obvious degradation after stress testing at up to 125°C for thousands of hours.
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基于锑的长波长VCSELs在室温下连续工作,在1266nm处输出功率为1.2mW,这是迄今为止使用该材料系统报道的最高功率。在10°C时单模功率为0.3mW,在70°C时单模功率为0.1mW,侧模抑制比高达42dB。初步的可靠性测试结果显示,到目前为止,经过高达125°C的压力测试,设备可以正常工作,没有明显的退化。
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