High Current, High Voltage Solid State Discharge Switches for Electromagnetic Launch Applications

Abstract

This presentation is about the work done on design, built-up, production and test of ready-to-use solid state switch assemblies using Thyristor- or IGCT technology. The presented thyristor switch assemblies, using 120 mm wafer size, are made to switch 3MJ stored energy into a load. The maximum charge voltage of the assembly is 12 kVdc, current capability more than 260 kA@tp=3.3 ms and a pulse repetition rate of up to 6 shots per minute with convection air cooling. New very large thyristors with 150 mm wafer diameter will be available from fall 2008. As second a 70 kA/21 kVdc switch using IGCT technology will be presented. The switch is designed for fast discharge in the microsecond range and has a very high di/dt capability. Because for the IGCT switches a reverse conducting design can be used, damped sine waves can be handled without the use of separate anti-parallel diodes. The thyristor and IGCT switches come complete with power supplies, driver units and if required also with air- or water cooled heat sinks. Reliability figures will be mentioned as well as information collected during long-term testing. The switches are supplied as complete power blocks and all components are produced on mass production line and therefore benefit from the volume production experience and quality monitoring system. It will be concluded that ABB has long term experience with production of components and switches for highest energy in pulsed power applications like electromagnetic launch and magnetic forming.