{"title":"Hydrodynamic 2D simulation of InP/InGaAs DHBT","authors":"J. M. Ruiz-Palmero, I. Schnyder, H. Jackel","doi":"10.1109/BIPOL.2004.1365767","DOIUrl":null,"url":null,"abstract":"Accurate fully thermal hydrodynamic 2D simulations of InP/InGaAs(P) double heterojunction bipolar transistors (DHBTs) are necessary for optimizing the HBT further towards +100 Gb/s circuits. Extrapolated parameters as mobilities, energy relaxation times, the thermal diffusion and other energy transport parameters from homogeneous Monte Carlo simulations of bulk InP and InGaAs are used for the Stratton hydrodynamic model. The simulations are further improved by a new doping dependent mobility model and taking into account thermionic emission over heterojunctions, band gap narrowing, and SRH (Shockley Read Hall) as well as radiative and Auger recombinations. Good agreement between measured and simulated output characteristics, unity current gain frequencies f/sub T/ and maximum oscillation frequencies f/sub max/ of actual very high speed InP/InGaAs(P) DHBTs are achieved.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Accurate fully thermal hydrodynamic 2D simulations of InP/InGaAs(P) double heterojunction bipolar transistors (DHBTs) are necessary for optimizing the HBT further towards +100 Gb/s circuits. Extrapolated parameters as mobilities, energy relaxation times, the thermal diffusion and other energy transport parameters from homogeneous Monte Carlo simulations of bulk InP and InGaAs are used for the Stratton hydrodynamic model. The simulations are further improved by a new doping dependent mobility model and taking into account thermionic emission over heterojunctions, band gap narrowing, and SRH (Shockley Read Hall) as well as radiative and Auger recombinations. Good agreement between measured and simulated output characteristics, unity current gain frequencies f/sub T/ and maximum oscillation frequencies f/sub max/ of actual very high speed InP/InGaAs(P) DHBTs are achieved.
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