{"title":"Design of GaN HEMT Class-E Power Amplifier for Satellite Communication","authors":"Jingyuan Wang, Hongxi Yu, Fei Yang","doi":"10.1109/ICMMT.2018.8563446","DOIUrl":null,"url":null,"abstract":"This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.","PeriodicalId":190601,"journal":{"name":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-05-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Microwave and Millimeter Wave Technology (ICMMT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICMMT.2018.8563446","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
This paper proposed a design of micro-strip line class-E power amplifier based on GaN HEMT devices working at 2.2GHz. By means of part harmonics suppression and inductance effect enhancing in the drain bias circuit, ideal class-E voltage and current waveform at drain and high efficiency were achieved. The combining simulation results demonstrate 74.8% PAE, 15.1dB power gain and 41.16dBm output power with 26dBm input power.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
