High-Speed Metal-Semiconductor-Metal Photo diode

2008 IEEE Region 10 and the Third international Conference on Industrial and Information Systems Pub Date : 2008-12-01 DOI:10.1109/ICIINFS.2008.4798383

A. Ganguly, A. Ganguly, Manik Bhoumic, A. Ganguly

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引用次数: 2

Abstract

High speed resonant cavity metal-semiconductor-metal (MSM) Schottky barrier photo detector is reported. Nickel is used as metal and quasi mono-crystalline silicon (QMS) with nanovoids is used as semiconductor material. QMS is sandwiched between thin nickel plates to obtain heterodyne characterization of MSM photo detector. QMS of suitable dimension shows significant enhancement of optical absorptance which in turn provides higher efficiency of the photo detector. A theoretical model of the photo diode is designed with a resonant cavity. The resonant cavity is chosen for obtaining higher quantum efficiency and the Schottky effect provides high speed to this photo detector. The micro cavity also causes wavelength selectivity accompanied by a drastic increase of the electric field at the resonant wavelength. The enhanced optical field provides high efficiency for faster transit time limited photodiodes with thinner absorption region. Appreciable improvement in results on speed, efficiency and responsivity is observed.

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高速金属-半导体-金属光电二极管

报道了高速谐振腔金属-半导体-金属(MSM)肖特基势垒光探测器。镍作为金属，准单晶硅(QMS)作为半导体材料。将QMS夹在薄镍板之间以获得MSM光电探测器的外差特性。合适尺寸的量子质粒可以显著提高光吸收，从而提高光电探测器的效率。设计了具有谐振腔的光电二极管的理论模型。选择谐振腔是为了获得更高的量子效率，肖特基效应为该光电探测器提供了高速。微腔还引起波长选择性，并伴随共振波长处电场的急剧增加。增强的光场为吸收区更薄、传输时间限制更快的光电二极管提供了更高的效率。结果在速度、效率和反应性方面有明显改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2008 IEEE Region 10 and the Third international Conference on Industrial and Information Systems

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