M. Leitner, P. Glas, M. Wrage, T. Sandrock, H. Legall, A. Heuer, G. Apostolopoulos, J. Herfort, L. Daweritz
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引用次数: 0
Abstract
Summary form only given. In recent years the development of semiconductor devices like SESAMs has led to a substantial progress in the generation of ultrashort pulses in solid-state lasers. The use of semiconductor materials makes it possible to combine strong nonlinear properties with short recombination times. In this work we describe a novel mode locking device based on low-temperature-grown GaAs (LT-GaAs) combined with a double-clad silica fiber laser being doped with Nd/sub 2/O/sub 3/ (1300 ppm) emitting at 1.06 /spl mu/m. The mode locking mechanism is based on the intensity dependent defocusing in the LT-GaAs.
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