{"title":"Synthesis of GaN by reactive sputtering at low temperature","authors":"A. Jagoda, L. Dobrzański, B. Stańczyk","doi":"10.1109/WBL.2001.946557","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.","PeriodicalId":246239,"journal":{"name":"Journal of Wide Bandgap Materials","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Wide Bandgap Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/WBL.2001.946557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Summary form only given. The authors report on the technology of GaN synthesis which is based on reactive ion sputtering from a Ga target in a nitrogen atmosphere. This process is carried out at room temperature and in low pressure conditions.
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