Coherent parametric RF downconversion in CMOS

Zhixing Zhao, Jean-François Bousquet, S. Magierowski
{"title":"Coherent parametric RF downconversion in CMOS","authors":"Zhixing Zhao, Jean-François Bousquet, S. Magierowski","doi":"10.1109/RFIC.2010.5477383","DOIUrl":null,"url":null,"abstract":"Parametric circuits constitute a longstanding RF technique that has been largely ignored by the RFIC community. Increasing interest in applying CMOS to (sub)millimeter-wave applications plus mounting scaling complexity may combine to revitalize this circuit style. This paper presents basic parametric downconverter structures, their theory of operation, and the benefits to be gained from CMOS implementation. A low-power, sub-1-V, fully integrated mixer in 130-nm CMOS is introduced. It implements two parametric modes and operates on RF signals between 22 and 24 GHz with possible conversion gains in excess of 20 dB.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 13

Abstract

Parametric circuits constitute a longstanding RF technique that has been largely ignored by the RFIC community. Increasing interest in applying CMOS to (sub)millimeter-wave applications plus mounting scaling complexity may combine to revitalize this circuit style. This paper presents basic parametric downconverter structures, their theory of operation, and the benefits to be gained from CMOS implementation. A low-power, sub-1-V, fully integrated mixer in 130-nm CMOS is introduced. It implements two parametric modes and operates on RF signals between 22 and 24 GHz with possible conversion gains in excess of 20 dB.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
CMOS中相干参数射频下变频
参数电路是一种长期存在的射频技术,但在很大程度上被射频电路界所忽视。将CMOS应用于(亚)毫米波应用的兴趣日益增加,加上缩放复杂性的增加,可能会使这种电路风格重新焕发活力。本文介绍了参量下变频器的基本结构、工作原理以及CMOS实现的好处。介绍了一种低功耗、低于1 v、完全集成的130纳米CMOS混频器。它实现了两种参数模式,并在22和24 GHz之间的射频信号上工作,可能的转换增益超过20 dB。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A 31-dBm, high ruggedness power amplifier in 65-nm standard CMOS with high-efficiency stacked-cascode stages A 0.13-µm CMOS local oscillator for 60-GHz applications based on push-push characteristic of capacitive degeneration A 1.8 to 2.4-GHz 20mW digital-intensive RF sampling receiver with a noise-canceling bandpass low-noise amplifier in 90nm CMOS Millimeter wave CMOS VCO with a high impedance LC tank A single-chip 2.4GHz double cascode power amplifier with switched programmable feedback biasing under multiple supply voltages in 65nm CMOS for WLAN application
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1