K. Inou, Y. Katsumata, S. Matsuda, H. Naruse, H. Sugaya, H. Iwai
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引用次数: 0
Abstract
An in-situ highly doped arsenic polysilicon emitter technology has been developed as a way to improve the degradation of electrical characteristics suffered by narrow emitter bipolar transistors due to the plug effect. We have experimentally confirmed that transistors fabricated with the new technique have good electrical characteristics.
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