Modeling of the substrate effect in high-speed Si-bipolar ICs

Abstract

The contribution of the p/sup -/ substrate and channel stopper on the equivalent circuits of Si-bipolar transistors and bond pads are theoretically and experimentally investigated up to very high frequencies. Equivalent substrate circuits are derived and verified by numerical simulation using a new computer program. The validity of both the numerical simulation results and the equivalent circuits are checked by on-wafer measurements up to 20 GHz.