High-speed silicon Mach-Zehnder modulator operating beyond 40 Gb/s

Jing Wang, C. Qiu, Hao Li, Le Li, A. Pang, Z. Sheng, Aimin Wu, Xi Wang, S. Zou, F. Gan
{"title":"High-speed silicon Mach-Zehnder modulator operating beyond 40 Gb/s","authors":"Jing Wang, C. Qiu, Hao Li, Le Li, A. Pang, Z. Sheng, Aimin Wu, Xi Wang, S. Zou, F. Gan","doi":"10.1364/ACPC.2012.ATH2B.3","DOIUrl":null,"url":null,"abstract":"We report a carrier-depleted silicon-based Mach-Zehnder optical modulator operating beyond 40 Gb/s. The device has a V<sub>π</sub>L of 16 V·mm and an on-chip insertion loss as low as 6.2 dB.","PeriodicalId":118096,"journal":{"name":"2012 Asia Communications and Photonics Conference (ACP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2012-11-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 Asia Communications and Photonics Conference (ACP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/ACPC.2012.ATH2B.3","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

We report a carrier-depleted silicon-based Mach-Zehnder optical modulator operating beyond 40 Gb/s. The device has a VπL of 16 V·mm and an on-chip insertion loss as low as 6.2 dB.
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运行速度超过40 Gb/s的高速硅马赫-曾德尔调制器
我们报告了一种运行速度超过40 Gb/s的载流子耗尽硅基马赫-曾德尔光调制器。该器件的Vπ l为16 V·mm,片内插入损耗低至6.2 dB。
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