Linearity Analysis of Gate Engineered Dopingless and Junctionless Silicon Nanowire FET

Sarabdeep Singh, A. Raman, Naveen Kumar, Ravi Ranjan, Deep Shekhar, S. Anand
{"title":"Linearity Analysis of Gate Engineered Dopingless and Junctionless Silicon Nanowire FET","authors":"Sarabdeep Singh, A. Raman, Naveen Kumar, Ravi Ranjan, Deep Shekhar, S. Anand","doi":"10.1109/SPIN.2019.8711788","DOIUrl":null,"url":null,"abstract":"This paper demonstrate the comparative study of various linearity as well as intermodulation distortion (IMD) parameters for junctionless (JL) and charge plasma (CP) dopingless nanowire FETs with dual material gate (DM). The various parameters considered for analysis includes higher order transconductance coefficients: gm2 (second-order) & gm3 (third-order), second-third order harmonic distortion HD2 &HD3, third order current intercept point (IIP3), third order IMD (IMD3), higher order voltage intercept points (VIP2 & VIP3) etc. The simulation study results reveals that analog parameters namely transconductance gm and transconductance gain factor (TGF) along with cut-off frequency fT are better for CP_DM. The other parameters including Cgg, gm3, HD2, HD3, IIP3 and VIP3 for JL_DM shows enhanced performance over CP_DM.","PeriodicalId":344030,"journal":{"name":"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-03-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 6th International Conference on Signal Processing and Integrated Networks (SPIN)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SPIN.2019.8711788","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

This paper demonstrate the comparative study of various linearity as well as intermodulation distortion (IMD) parameters for junctionless (JL) and charge plasma (CP) dopingless nanowire FETs with dual material gate (DM). The various parameters considered for analysis includes higher order transconductance coefficients: gm2 (second-order) & gm3 (third-order), second-third order harmonic distortion HD2 &HD3, third order current intercept point (IIP3), third order IMD (IMD3), higher order voltage intercept points (VIP2 & VIP3) etc. The simulation study results reveals that analog parameters namely transconductance gm and transconductance gain factor (TGF) along with cut-off frequency fT are better for CP_DM. The other parameters including Cgg, gm3, HD2, HD3, IIP3 and VIP3 for JL_DM shows enhanced performance over CP_DM.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
栅极工程无掺杂和无结硅纳米线场效应管的线性分析
本文对双材料栅极(DM)无结(JL)和电荷等离子体(CP)掺杂纳米线场效应管的各种线性度和互调失真(IMD)参数进行了比较研究。用于分析的各种参数包括高阶跨导系数:gm2(二阶)和gm3(三阶),二阶和三阶谐波失真HD2和hd3,三阶电流截点(IIP3),三阶IMD (IMD3),高阶电压截点(VIP2和VIP3)等。仿真研究结果表明,模拟参数跨导gm和跨导增益因子(TGF)随截止频率fT对CP_DM较好。JL_DM的其他参数包括Cgg、gm3、HD2、HD3、IIP3和VIP3,显示出比CP_DM更强的性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Data Classification by Reducing Bias of Domain-Oriented Knowledge Based on Data Jackets A Robust Automatic Algorithm for Statistical Analysis and Classification of Lung Auscultations Modified Dispersion Equation for Planar Open Tape Helix Travelling Wave Tube Experimental Analysis of Power Generation for Ultra-Low Power Wireless Sensor Nodes Using Various Coatings on Thermoelectric Energy Harvester A Novel Reconfigurable Patch Antenna with Parasitic Patch
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1