Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]

M.N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence, A. Hoffmann
{"title":"Characterizing effects of radiation on forward and reverse saturation characteristics of n-channel devices [SRAMs]","authors":"M.N. Jaafar Ali, B. Bhuva, S. Kerns, M. Maher, R. Lawrence, A. Hoffmann","doi":"10.1109/RADECS.1999.858635","DOIUrl":null,"url":null,"abstract":"The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.","PeriodicalId":135784,"journal":{"name":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS.1999.858635","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The forward and reverse characteristics of an n-channel device during the saturation mode of operation are used to determine the extent of damage non-uniformity along the channel. The non-uniformity increases with the total dose. The unmatched forward and reverse characteristics will be a major problem for memory circuits for advanced technologies.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
辐射对n沟道器件正反饱和特性影响的表征[sram]
在饱和工作模式下,n通道器件的正向和反向特性用于确定沿通道的损伤不均匀性的程度。不均匀性随总剂量增加而增加。不匹配的正向和反向特性将成为先进技术存储电路的主要问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Low energy proton testing of space electronics at "JULIC" On-line gamma dosimetry with phosphorous and germanium co-doped optical fibres Radiation evaluation method of commercial off-the-shelf (COTS) electronic printed circuit boards (PCBs) Nanocontrollers characterization under radiation Radiation tolerant design-theory and practice for proximity sensing
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1