{"title":"Fabrication and performance of InP MISFET","authors":"T. Kawakami, M. Okamura","doi":"10.1109/IEDM.1980.189862","DOIUrl":null,"url":null,"abstract":"N-channel normally-off InP MISFETs for high-gain and high-speed application have been developed, using the following fabrication techniques: (1)Sulphur diffusion process into p- and semi-insulating InP wafers for low resistive source and drain of the n-channel FET. (2)Al2O3CVD method onto the InP substrate. (3)n-channel formation on the semi-insulating InP substrate surface. (4)A pseudo self-alignment technique for eliminating gate-drain and gate-source parasitic capacitances. Conductance and drift properties have been studied together with MIS diode capacitance measurement and AES analysis.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"2010 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189862","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
N-channel normally-off InP MISFETs for high-gain and high-speed application have been developed, using the following fabrication techniques: (1)Sulphur diffusion process into p- and semi-insulating InP wafers for low resistive source and drain of the n-channel FET. (2)Al2O3CVD method onto the InP substrate. (3)n-channel formation on the semi-insulating InP substrate surface. (4)A pseudo self-alignment technique for eliminating gate-drain and gate-source parasitic capacitances. Conductance and drift properties have been studied together with MIS diode capacitance measurement and AES analysis.
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