Gate Driver Circuit for a 15-inch AMOLED Display with Narrow Border

Abstract

Top-gate thin-film transistors (TFTs) has been proposed and introduced to fabricate active-matrix organic light-emitting diode (AMOLED) displays with large size and high resolution. The electrical characteristics, uniformity and photostability of the top-gate TFTs have been studied systematically. Experimental results show that the Ion/Ioff ratio reaches 107, indicating good switching characteristic. Meanwhile, the threshold voltage (Vth) over the whole AMOLED display changes from -0.5V to 0.7V, demonstrating good uniformity TFT process. A novel circuit design technology for gate driver on array (GOA) circuits integrating with top-gate TFTs has been proposed. In contrast to traditional GOA circuit, each GOA stage proposed in the work can export two shift register pulses. By using this technology, narrow border in AMOLED display can be obtained. The performance and the stabilization of GOA circuit has been systematically studied. Finally, this GOA circuit is placed in a 15-inch AMOLED display to testify the function.