{"title":"Morphological stability of multilayer film surface during diffusion processes","authors":"S. Kostyrko, G. Shuvalov","doi":"10.1109/SCP.2015.7342172","DOIUrl":null,"url":null,"abstract":"It is well known that multilayer thin film structures are inherently stressed owing to lattice mismatch between different layers. Similar to other stressed solids, such materials can self-organize a surface shape with mass redistribution to minimize a total energy. However, the morphological stability are very important in fabrication of defect-free microelectronic devices. With developed model, the conditions leading to instability can be examined. Based on Gibbs thermodynamics and linear theory of elasticity, we present an algorithm for deriving a governing equation that gives the amplitude change of surface undulation via surface and volume diffusion. A parametric study of this equation leads to the definition of a critical undulation wavelength which stabilizes the surface.","PeriodicalId":110366,"journal":{"name":"2015 International Conference \"Stability and Control Processes\" in Memory of V.I. Zubov (SCP)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-12-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Conference \"Stability and Control Processes\" in Memory of V.I. Zubov (SCP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCP.2015.7342172","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
It is well known that multilayer thin film structures are inherently stressed owing to lattice mismatch between different layers. Similar to other stressed solids, such materials can self-organize a surface shape with mass redistribution to minimize a total energy. However, the morphological stability are very important in fabrication of defect-free microelectronic devices. With developed model, the conditions leading to instability can be examined. Based on Gibbs thermodynamics and linear theory of elasticity, we present an algorithm for deriving a governing equation that gives the amplitude change of surface undulation via surface and volume diffusion. A parametric study of this equation leads to the definition of a critical undulation wavelength which stabilizes the surface.