S. Zaynabidinov, N. Turgunov, E. Berkinov, R.M. Turmanova
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Abstract
In this study, using the method of electron probe analysis, the sequence of formation of various impurity precipitates of nickel in silicon in the process of diffusion doping at a temperature of T = 1573 K was investigated. The influence of the value of the cooling rate of the samples after diffusion annealing on the formation of impurity precipitates was considered. The morphological parameters of impurity precipitates of nickel in silicon have been revealed, and their chemical compositions have been determined. It was found that, depending on the size and shape, the nickel precipitates can have a single or multilayer structure
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