R. Kelsall, Z. Ikonić, P. Harrison, S. Lynch, R. Bates, D. Paul, D. Norris, S. Liew, A. Cullis, D. Robbins, P. Murzyn, C. Pidgeon, D. D Arnone
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引用次数: 1
Abstract
Terahertz electroluminescence due to light hole-heavy hole intersubband transitions in p-type Si/SiGe quantum cascade structures has been observed in both surface-normal and edge emission geometries. THz output powers of up to 50 nW have been observed for surface emission from 100 period Si/sub 0.76/Ge/sub 0.24//Si heterostructures grown on a Si/sub 0.8/Ge/sub 0.2/ relaxed buffer or 'virtual substrate'.
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