Solid state on-off switches using IGCT technology

2007 16th IEEE International Pulsed Power Conference Pub Date : 2007-06-17 DOI:10.1109/PPPS.2007.4652364

A. Welleman, W. Fleischmann, W. Kaesler

{"title":"Solid state on-off switches using IGCT technology","authors":"A. Welleman, W. Fleischmann, W. Kaesler","doi":"10.1109/PPPS.2007.4652364","DOIUrl":null,"url":null,"abstract":"This presentation is about semiconductor devices used for On-Off pulse switching applications and used in a 12 kVdc / 3.2kA / 10 Hz solid state switch assembly. The switch assembly is built-up with IGCT (Integrated Gate Controlled Thyristors) and used for long pulse (1.7 ms) Klystron modulators. The design was made in 2002 and successfully implemented in the Tesla Test Facility (TTF) at DESY in Hamburg / Germany. The components and switches are in the position to switch and interrupt safely up to 4 kA. The presentation will inform about the IGCT devices, switch development, construction, production and commissioning of the complete assembly. Also reliability figures will be presented, and the last 4 years of operation have shown that the switches are extremely rugged. Several IGCT switches are in use in pulse modulators built by PPT Puls Plasmatechnik GmbH and this technology has resulted in a breakthrough for solid state switches in modulator applications. By using different silicon diameters for the devices, different current and pulse repetition rates can be achieved. A new improved version of the switch design is under development.","PeriodicalId":275106,"journal":{"name":"2007 16th IEEE International Pulsed Power Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 16th IEEE International Pulsed Power Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PPPS.2007.4652364","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 15

Abstract

This presentation is about semiconductor devices used for On-Off pulse switching applications and used in a 12 kVdc / 3.2kA / 10 Hz solid state switch assembly. The switch assembly is built-up with IGCT (Integrated Gate Controlled Thyristors) and used for long pulse (1.7 ms) Klystron modulators. The design was made in 2002 and successfully implemented in the Tesla Test Facility (TTF) at DESY in Hamburg / Germany. The components and switches are in the position to switch and interrupt safely up to 4 kA. The presentation will inform about the IGCT devices, switch development, construction, production and commissioning of the complete assembly. Also reliability figures will be presented, and the last 4 years of operation have shown that the switches are extremely rugged. Several IGCT switches are in use in pulse modulators built by PPT Puls Plasmatechnik GmbH and this technology has resulted in a breakthrough for solid state switches in modulator applications. By using different silicon diameters for the devices, different current and pulse repetition rates can be achieved. A new improved version of the switch design is under development.

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固态开关采用IGCT技术

本演讲是关于用于开关脉冲开关应用的半导体器件，用于12 kVdc / 3.2kA / 10 Hz固态开关组件。开关组件由IGCT(集成门控晶闸管)组成，用于长脉冲(1.7 ms)速调管调制器。该设计于2002年完成，并在德国汉堡DESY的特斯拉测试设施(TTF)中成功实施。元件和开关处于安全切换和中断的位置，最高可达4ka。该报告将介绍IGCT设备，开关的开发，建设，生产和调试的完整组装。此外，还将介绍可靠性数据，过去4年的运行表明，这些开关非常坚固耐用。PPT Puls Plasmatechnik GmbH公司制造的脉冲调制器中使用了几种IGCT开关，该技术为调制器应用中的固态开关带来了突破。通过对器件使用不同的硅直径，可以实现不同的电流和脉冲重复率。一种新的改进版本的开关设计正在开发中。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2007 16th IEEE International Pulsed Power Conference

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