A. Dasgupta, C. Yadav, P. Rastogi, A. Agarwal, Y. Chauhan
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引用次数: 2
Abstract
We present a physical compact model for the calculation of the capacitance including a physics based model for the calculation of the charge centroid for III-V FETs. We have used Fermi-Dirac statistics considering two energy subbands obtained from analytical Schrödinger-Poisson solution of charge. The model is validated with data from numerical device simulations and shows excellent match.
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