{"title":"Electrical-optical characteristics of buried waveguide heterostructure InGaAsP injection lasers","authors":"R.B. Wilson, R. Nelson, P. Wright","doi":"10.1109/IEDM.1980.189840","DOIUrl":null,"url":null,"abstract":"The fabrication procedure, electrical properties, and optical characteristics of InGaAsP buried-waveguide-heterostructure (BWH) lasers emitting at γ = 1.3 µm are described and compared with InGaAsP buried heterostructure (BH) and strip-buried heterostructure (SBH) lasers. Threshold currents as low as 140 mA have been achieved for the BWH structure which incorporates a high band gap quaternary waveguide layer adjacent to the active layer stripe. Measurements of the variation of the near-field and far-field patterns with stripe width indicate that the BWH device will operate in the fundamental transverse mode for stripe widths up to 5 µm.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"35 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189840","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The fabrication procedure, electrical properties, and optical characteristics of InGaAsP buried-waveguide-heterostructure (BWH) lasers emitting at γ = 1.3 µm are described and compared with InGaAsP buried heterostructure (BH) and strip-buried heterostructure (SBH) lasers. Threshold currents as low as 140 mA have been achieved for the BWH structure which incorporates a high band gap quaternary waveguide layer adjacent to the active layer stripe. Measurements of the variation of the near-field and far-field patterns with stripe width indicate that the BWH device will operate in the fundamental transverse mode for stripe widths up to 5 µm.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
