{"title":"A TCAD Analysis of the Impact of Starting Material Doping on 1.8V CMOS Threshold and Body Effect","authors":"A.M.H. Noorashiqin, A. Kordesch, M. Muhamad","doi":"10.1109/SCORED.2007.4451415","DOIUrl":null,"url":null,"abstract":"This paper is focused on the body effect of a 1.8 V Complementary MOSFET (CMOS) device in a twin-well process. The effect of different starting material doping levels impact the body effect is investigated, which is important for both digital and analog design. MOSFET performance is determined not only by the threshold voltage, which determines when the device is \";on\"; or \";off but also by the shift of threshold voltage, Vth with body bias. The channel doping profile, which is influenced, by substrate doping mainly determines threshold and body effect. These effects on the device behavior have been simulated using TSUPREM-4 for process characterization and MEDICI for electrical characterization.","PeriodicalId":443652,"journal":{"name":"2007 5th Student Conference on Research and Development","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 5th Student Conference on Research and Development","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SCORED.2007.4451415","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper is focused on the body effect of a 1.8 V Complementary MOSFET (CMOS) device in a twin-well process. The effect of different starting material doping levels impact the body effect is investigated, which is important for both digital and analog design. MOSFET performance is determined not only by the threshold voltage, which determines when the device is ";on"; or ";off but also by the shift of threshold voltage, Vth with body bias. The channel doping profile, which is influenced, by substrate doping mainly determines threshold and body effect. These effects on the device behavior have been simulated using TSUPREM-4 for process characterization and MEDICI for electrical characterization.
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