A TCAD Analysis of the Impact of Starting Material Doping on 1.8V CMOS Threshold and Body Effect

A.M.H. Noorashiqin, A. Kordesch, M. Muhamad
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Abstract

This paper is focused on the body effect of a 1.8 V Complementary MOSFET (CMOS) device in a twin-well process. The effect of different starting material doping levels impact the body effect is investigated, which is important for both digital and analog design. MOSFET performance is determined not only by the threshold voltage, which determines when the device is ";on"; or ";off but also by the shift of threshold voltage, Vth with body bias. The channel doping profile, which is influenced, by substrate doping mainly determines threshold and body effect. These effects on the device behavior have been simulated using TSUPREM-4 for process characterization and MEDICI for electrical characterization.
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起始材料掺杂对1.8V CMOS阈值和体效应影响的TCAD分析
本文主要研究1.8 V互补MOSFET (CMOS)器件在双阱工艺中的体效应。研究了不同起始材料掺杂水平对体效应的影响,这对数字和模拟设计都有重要意义。MOSFET的性能不仅取决于阈值电压,它决定了器件何时处于“导通”状态;或“;关”,但也由阈值电压的移位,Vth与体偏置。受衬底掺杂影响的通道掺杂分布主要决定阈值和体效应。使用TSUPREM-4进行工艺表征,使用MEDICI进行电气表征,模拟了这些对器件行为的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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