Latest developments on EUV reticle and pellicle research and technology at TNO

R. Verberk, N. Koster, E. te Sligte, Wilbert Staring
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引用次数: 2

Abstract

At TNO an extensive EUV optics life time program has been running for over 15 years together with our partners ASML and Carl Zeiss. This has contributed to the upcoming introduction of EUV High Volume Manufacturing (HVM). To further help the industry with the introduction of EUV, TNO has worked on extending their facilities with a number of reticle and pellicle research infrastructure facilities. In this paper we will show some of the facilities that are available at TNO and shortly introduce their capabilities. Recently we have opened our EBL2 facility, which is an EUV Beam Line (EBL2) meant for studying the effects of high power EUV illumination on optics, reticles and pellicles up to the power roadmap of 500 W at intermediate Focus (IF). This facility is open to users from all over the world and is beneficial for the industry in helping developing alternative capping layers and contamination control strategies for optics lifetime, new absorber materials, pellicles and resists. The EBL2 system has seen first light in December 2016 and is now in the final stage of acceptance testing and qualification. It is expected that the system will be fully operational in the third quarter of 2017, and available for users. It is possible to transfer reticles to and from the EBL2 by means of the reticle handler using the dual pod interface. This secures backside cleanliness to NXE standards and thus enables wafer printing on a NXE tool in a later stage after the exposures and inspection at EBL2. Besides EBL2, a high performance and ultra-clean reticle handler is available at TNO. This handler incorporates our particle scanner Rapid Nano 4 for front side inspection of reticle blanks with a detection limit down to 20 nm particles. Attached to the handler is also an Optical Coherence Tomography (OCT) inspection tool for back-side reticle or pellicle inspection with a resolution down to 1 micron.
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TNO在EUV光镜和薄膜研究和技术方面的最新进展
在TNO,与我们的合作伙伴ASML和卡尔蔡司一起,广泛的EUV光学寿命计划已运行超过15年。这有助于即将推出的EUV大批量制造(HVM)。为了进一步帮助行业引入EUV, TNO一直致力于扩展他们的设施,包括一些瞄准镜和薄膜研究基础设施。在本文中,我们将展示TNO中可用的一些设施,并简要介绍它们的功能。最近,我们开设了EBL2设施,这是一个EUV光束线(EBL2),旨在研究高功率EUV照明对光学,光栅和薄膜的影响,直至500 W的功率路线图在中间焦点(IF)。该设施向来自世界各地的用户开放,有助于开发光学寿命的替代封盖层和污染控制策略,新的吸收材料,薄膜和抗蚀剂。EBL2系统于2016年12月首次亮相,目前处于验收测试和鉴定的最后阶段。预计该系统将于2017年第三季度全面投入使用,并可供用户使用。可以通过使用双吊舱接口的划线处理程序将划线转移到EBL2或从EBL2转移。这确保了背面的清洁度符合NXE标准,因此在EBL2曝光和检查后的后期阶段,可以在NXE工具上进行晶圆打印。除了EBL2外,TNO还提供高性能超干净的网线处理程序。该处理器结合了我们的粒子扫描仪快速纳米4的正面检查与检测限制低至20纳米颗粒的划线空白。附在手柄上的还有一个光学相干断层扫描(OCT)检测工具,用于背面十字或薄膜检测,分辨率低至1微米。
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