Implementation of a high frequency PWM signal in FPGA FOR GaN power devices switching

Abstract

This paper describes a FPGA-based (Field Programmable Gate Array) high-frequency signal generation platform, which aims to drive GaN (Gallium nitride) power semiconductor devices. FPGA is a digital platform that operates at frequency levels up to GHz. Thus, it can be an interesting solution to driving GaN devices that operate on typical frequencies of 1 to 10 MHz. A brief review on the FPGA platform and the description of the implementation of Pulse-Width Modulation (PWM) signals at frequencies up to 2 MHz are presented. Experimental results have shown that it is possible to obtain a duty cycle in the range from 1 to 99% with a resolution of 0.67%. Additionally, concerning the PWM period, the phase can be defined in the range from 1 to 360 degrees with a resolution of 2.4 degrees. Finally, some power applications that benefits by using GaN devices at high frequencies are shown.