{"title":"Silica-based films and multilayer stacks for lightwave circuits fabricated by surface-plasma chemical vapor deposition","authors":"K. Golant","doi":"10.1109/LEOSWT.2008.4444381","DOIUrl":null,"url":null,"abstract":"Peculiarities of the application of SPCVD to the fabrication of doped silica films for the use in integrated optics are discussed. Photosensitive germanosilicate films, heavily erbium doped layers, multilayer film structures are considered as examples.","PeriodicalId":114191,"journal":{"name":"2008 IEEE/LEOS Winter Topical Meeting Series","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE/LEOS Winter Topical Meeting Series","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOSWT.2008.4444381","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Peculiarities of the application of SPCVD to the fabrication of doped silica films for the use in integrated optics are discussed. Photosensitive germanosilicate films, heavily erbium doped layers, multilayer film structures are considered as examples.