A novel quantum effect fet with resonantly modulated transfer characteristics

Abstract

Summary form only given. A novel quantum effect field-effect transistor (FET) has been realized in which drain current is resonantly modulated with gate-source voltage by using the mobility-modulation effect in a double quantum well structure. Such characteristics are achieved by gate-controlled resonant coupling, which leads to a large positive-negative-positive transconductance. This may make a new functional device feasible by rather simple FET-compatible processes. As long as the bias and the load are appropriately set, this FET can offer novel functionalities such as frequency multiplier action. >