Characterization of a large scale DNW MAPS fabricated in a 3D integration process

Abstract

This work is concerned with the characterization of a large matrix of deep n-well (DNW) 130 nm CMOS monolithic active pixel sensors (MAPS) with an FPGA based system. The acquisition system has been configured to stimulate the sensor and process the output data of the devices under test. Characterization results provide evidence of a remarkably high yield in the vertical integration process interconnecting the two layers fabricated by Globalfoundries and subsequently processed by Tezzaron Semiconductor.